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the rf mosfet line nCchannel enhancementCmode lateral mosfet designed f or broadband commercial and industrial applications with frequen- cies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for largeCsignal, common source amplifier applications in 32 volt transmitter equipment. ? typical narrowband twoCtone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power 180 watts pep power gain 17 db efficiency 36% imd C35 dbc ? typical broadband twoCtone performance @ f1 = 857 mhz, f2 = 863 mhz, 32 volts output power 180 watts pep power gain 14.5 db efficiency 37% imd C31 dbc ? internally matched, controlled q, for ease of use ? integrated esd protection ? 100% tested for load mismatch stress at all phase angles with 3:1 vswr @ 32 vdc, f1 = 857 mhz, f2 = 863 mhz, 180 watts pep ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters maximum ratings (1) rating symbol value unit drainCsource voltage v dss 68 vdc gateCsource voltage v gs C 0.5, +15 vdc drain current C continuous i d 17 adc total device dissipation @ t c = 25 c derate above 25 c p d 350 2.0 w w/ c storage temperature range t stg C 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.5 c/w (1) each side of device measured separately. note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF372/d semiconductor technical data 470 C 860 mhz, 180 w, 32 v lateral nCchannel rf power mosfet case 375gC04, style 1 niC860c3 ? motorola, inc. 2002 rev 5
MRF372 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) drain?source breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 68 ? ? vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 v, i d = 200 a) v gs(th) 2 3 4 vdc gate quiescent voltage (v ds = 32 v, i d = 100 ma) v gs(q) 2.5 3.5 4.5 vdc drain?source on?voltage (v gs = 10 v, i d = 3 a) v ds(on) ? 0.28 0.45 vdc forward transconductance (v ds = 10 v, i d = 3 a) g fs ? 2.6 ? s dynamic characteristics (1) input capacitance (includes input matching capacitance) (v ds = 32 v, v gs = 0 v, f = 1 mhz) c iss ? 260 ? pf output capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c oss ? 69 ? pf reverse transfer capacitance (v ds = 32 v, v gs = 0 v, f = 1 mhz) c rss ? 2.5 ? pf functional characteristics, narrowband operation (in motorola MRF372 narrowband circuit, 50 ohm system) (2) common source power gain (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 16 17 ? db drain efficiency (v dd = 32 v, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) 33 36 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?35 ?31 dbc output mismatch stress (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 400 ma, f1 = 857 mhz, f2 = 863 mhz, v swr = 3:1 at all phase angles of test) no degradation in output power typical characteristics, broadband operation (in motorola MRF372 broadband circuit, 50 ohm system) (2) common source power gain (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 14.5 ? db drain efficiency (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) ? 37 ? % intermodulation distortion (v dd = 32 vdc, p out = 180 w pep, i dq = 2 x 500 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?31 ? dbc (1) each side of device measured separately. (2) measured in push?pull configuration.
3 MRF372 motorola rf device data typical characteristics figure 1. capacitance versus voltage note: c iss does not include input matching capacitance.
MRF372 4 motorola rf device data figure 2. 860 mhz narrowband dc bias networks table 1. 860 mhz narrowband dc bias networks component designations and values designation description c1 2 2 pf chip capacitor b case, atc c2 0 5 5.0 pf variable capacitor, b case, johansen gigatrim c3a, b 22 f, 22 v tantalum chip capacitors, kemet #t491d226k22as c4a b c14a, b 47 0 pf chip capacitors b case atc c5a, b 100 pf chip capacitors, b case, atc c6 10.0 pf chip capacitor, b case, atc c7a b 2 7 pf chip capacitors a case atc c8a, b 1 0 f, 100 v chip capacitors, vitramon #vj3640y105kxbat c9 10.0 pf chip capacitor, b case, atc c10a, b 2.2 f 100 v chip capacitors vitramon #vj3640y225kxbat c11 5 1 pf chip capacitor b case, atc c12a, b 0.01 f, 100 v chip capacitors, kemet #vj1210y103kxbat c13 3.9 pf chip capacitor, b case, atc c15 1.2 pf chip capacitor, b case, atc l1a, b 130 nh, coilcraft #132C11sm l2a, b #24 awg 3 turns loose, fair rite #2643706001 l3a b 3 85 nh coilcraft #0906C4 l4a, b 5 0 nh, coilcraft #a02t r1a, b, r2a, b r4a, b, r5a, b 180 , 1/4 w chip resistors, vishay dale (1210) r3a, b 12 , 1/8 w chip resistors vishay dale (1206) pcb MRF372 printed circuit board rev 1a, rogers ro4350, height 30 mils = 3.48 balun a, b vertical 860 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, = 10.2
5 MRF372 motorola rf device data vertical balun mounting detail figure 3. 860 mhz narrowband component layout
MRF372 6 motorola rf device data typical twoCtone narrowband characteristics figure 4. cofdm performance (860 mhz) figure 5. 8Cvsb performance (860 mhz) figure 6. power gain versus output power figure 7. intermodulation distortion versus output power figure 8. drain efficiency versus output power
7 MRF372 motorola rf device data ? figure 9. narrowband series equivalent input and output impedance f mhz z source ? z load ? 845 860 875 3.99 + j2.50 3.18 + j1.46 3.56 + j1.98 5.63 C j0.38 5.28 C j0.43 4.94 C j0.56 f ghz z source ? z load ? 1.69 1.72 1.75 2.85 C j14.30 1.23 C j9.37 1.54 C j9.60 1.73 C j9.62 harmonics 3.27 C j14.32 3.35 C j14.36 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.

MRF372 8 motorola rf device data figure 10. 470C860 mhz broadband dc bias networks table 2. 470C860 mhz broadband dc bias networks component designations and values designation description c1 0.7 pf chip capacitor, b case, atc c2, c13 0.8 8.0 pf variable capacitors, johansen gigatrim c3a, b, c14a, b, c, d 100 pf chip capacitors, b case, atc c4 4.7 pf chip capacitor b case, atc c5 7 5 pf chip capacitor b case, atc c6 10.0 pf chip capacitor, b case, atc c7a, b 6.2 pf chip capacitors, a case, atc c8a b 22 f 22 v tantalum chip capacitors kemet #t491d226k22as c9a, b 0 1 f, 100 v chip capacitors, vitramon #vj3640y104kxbat c10 13 pf chip capacitor, b case, atc c11 6 8 pf chip capacitor b case atc c12 3 9 pf chip capacitor, b case, atc c15a, b 3.3 pf chip capacitors, b case, atc c16a, b 10 f 35 v tantalum chip capacitors, kemet #t491d106k35as c17a b f , 100 v chip capacitors, vitramon #vj3640y3 5kxbat c18a, b 0.01 f chip capacitors, b case, atc l1a, b 12 55 nh coilcraft #1606C10 l2a, b 5.45 nh, coilcraft #0906C5 l3a, b, c 12.5 nh, coilcraft #a04t r1a b 10 ? 1/4 w chip resistors vishay dale (1210) r2a, b 2 2 k ? 1/4 w chip resistors, vishay dale (1210) r3a, b, r10a, b 390 ? , 1/8 w chip resistors, vishay dale (1206) r4ta, b 520 ? thermistor vishay #nths1206j14520r5% r5a, b 6.2 ? , 1/4 w chip resistors, vishay dale (1210) r6a, b 6.8 k ? , 1/4 w chip resistors, vishay dale (1210) r7 100 k? potentiometer, bourns r8 47.3 k? 1/8 w chip resistor, vishay dale (1206) r9a b, c, d 180 ? , 1/4 w chip resistors, vishay dale (1210) pcb MRF372 printed circuit board rev 1a, rogers ro4350, height 30 mils, = 3.48 balun a, b vertical 660 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, = 10.2
9 MRF372 motorola rf device data figure 11. 470C860 mhz broadband component layout vertical balun mounting detail
MRF372 10 motorola rf device data typical twoCtone broadband characteristics figure 12. power gain versus output power figure 13. intermodulation distortion versus output power figure 14. drain efficiency versus output power
11 MRF372 motorola rf device data ? ? figure 15. broadband series equivalent input and output impedance f mhz z source ? z load ? 470 560 660 4.46 + j2.57 7.84 C j0.14 6.40 C j1.06 4.88 + j3.50 5.45 + j0.07 8.13 C j0.73 760 860 6.25 C j0.31 6.67 C j0.46 8.27 + j1.00 7.52 C j0.02 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.

package dimensions case 375gC04 issue e d q g l k 2x he f c 4x b a t ! " # $$$ b (flange) 4x r (lid) s (insulator) j n (lid) m (insulator) a 4 niC860c3 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF372/d

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